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	Manufacture of semiconductor device
	YAMAGUCHI AKIO
	1984-07-03
著作权人	FUJITSU KK
专利号	JP1984114880A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor device
英文摘要	PURPOSE:To contrive to increase the degree of freedom for the design of a photosemiconductor device without the necessity of thick growth of an InGaP or InGaAsP layer by selectively removing a substrate with the solution containing ammonium hydroxide and hydrogen peroxide. CONSTITUTION:An N type InGaP layer 2, an InGaAsP layer 3, a P type InGaP layer 4, and a P type GaAs layer 5 are successively grown on an N type GaAs substrate A P-side electrode 6 is formed, an insulation film 7 is provided, heat treatment is performed, thus alloying between the electrode 6 and the layer 5, Cr and Au are evaporated, Au is plated, resulting in the formation of a P-side electrode 6'. The substrate 1 is polished, AuGeNi is evaporated, alloying heat treatment is performed, and then an N-side electrode 8 is formed. It is covered with an SiO2 film 9, an aperture is provided, and a photo lead-out window part 10 is formed by selectively etching the substrate 1 with the mixed aqueous solution of ammonia:hydrogen peroxide=1:20.
公开日期	1984-07-03
申请日期	1982-12-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76976]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	YAMAGUCHI AKIO. Manufacture of semiconductor device. JP1984114880A. 1984-07-03.

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