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	半導体レーザ
	日野 功
	1998-03-13
著作权人	日本電気株式会社
专利号	JP2758598B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ
英文摘要	PURPOSE:To prevent the deterioration of ends due to photoabsorption and the damage to the ends from occurring by a method wherein a multilayered structure including an active layer is provided; a ternary or higher III-V compound mixed crystal in different coupling length between group III atoms and group V atoms in the crystal is used as the active layer; and the carrier concentration in the active layer near the ends to be the reflecting surface or the outgoing surface is specified. CONSTITUTION:An n-type (Al0.4Ga0.6)0.5In0.5P clad layer 2, a Ga0.5 In0.5P active layer 3, a p type (Al0.4Ga0.6)In0.5P clad layer 4 and a p type GaAs cap layer 9 are successively grown on an n-type GaAs substrate 1 by the MOVPE process. The active layer 3 is grown meeting the requirements of temperature at 650 deg.C and V/III ratio without doping 400 impurity. Zn as p-type impurity is diffused in the part near the edge face 8 to provide the active layer part at least near the edge face 8 with the carrier concentration of 5X10cm. In such a constitution, a Zn diffused region 5 near the ends 8 is limited to the range of around 20mum inside the edge face 8 which are made by cleavage process.
公开日期	1998-05-28
申请日期	1987-07-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76672]
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	日野 功. 半導体レーザ. JP2758598B2. 1998-03-13.

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