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	Manufacture of semiconductor laser device
	YOSHIKAWA AKIO; KAZUMURA MASARU
	1985-12-12
著作权人	MATSUSHITA DENKI SANGYO KK
专利号	JP1985251687A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser device
英文摘要	PURPOSE:To obtain a semiconductor laser device, which oscillates at a single transverse mode and operates at a low threshold, by removing one part of a thin-film layer, which is formed onto one conduction type semiconductor substrate with a stepped section and displays a conduction type reverse to the substrate, and shaping a multilayer thin-film containing double hetero-structure onto the thin-film layer through a liquid-phase epitaxial method. CONSTITUTION:A stepped section is formed in parallel in the direction through photolithography onto the 100 face of a P type GaAs substrate 10. An N type GaAs current stopping layer 11 (carrier concentration: approximately 1X10cm) is grown onto the stepped section in approximately 1mum through a MOCVD method. A photo-resist is applied, a photo-resist film 12 is left onto a surface in the upper section of the stepped section, and a surface shown in a broken line 20 is exposed through etching. The photo-resist film 12 is removed, the surface of the substrate is purified, a crystal is grown through a LPE method, a P type Ga1-xAlxAs clad layer 13, a Ga1-yAlyAs active layer 14, an N type Ga1-xAlxAs clad layer 15 and an N type GaAs layer 16 are shaped onto the surface shown in the broken line 20, and a grown surface is flattened.
公开日期	1985-12-12
申请日期	1984-05-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76591]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	YOSHIKAWA AKIO,KAZUMURA MASARU. Manufacture of semiconductor laser device. JP1985251687A. 1985-12-12.

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