| Light emission device | |
| KAWASAKI HIDEJI | |
| 1990-08-10 | |
| 著作权人 | CANON INC |
| 专利号 | JP1990201988A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emission device |
| 英文摘要 | PURPOSE:To make up a reflecting mirror which is sufficient in strength and is free from electrical, optical absorption and maintain high light emission efficiency as well by making a single crystal grow on a dielectric substance and performing an epitaxial growth of a double hetero-structure. CONSTITUTION:Using a difference in a nucleation density between a nucleation face 7 and a non-nucleation face 8, III-V compound semiconductor crystals 9, such as GaAs, InP and like are formed through a selective nucleation process as shown in figure with epitaxial growths, such as MOCVD, LPE, MOMBE and the like. In the foregoing nucleation process, substrates 7 which are fine and have the nucleation density that is higher than that of the non-nucleation face are provided on the non-nucleation face 8 and its process makes each single crystal 9 grow to form a light emission element. A reflecting mirror which lessens light absorption and electrical losses is made up and a light emission device which is superior in strength is thus obtained. |
| 公开日期 | 1990-08-10 |
| 申请日期 | 1989-01-31 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76584]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | KAWASAKI HIDEJI. Light emission device. JP1990201988A. 1990-08-10. |
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