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	Semiconductor laser
	KURODA TAKAROU; KAJIMURA TAKASHI; KASHIWADA YASUTOSHI; KAYANE NAOKI; AIKI KUNIO; UMEDA JIYUNICHI
	1985-11-12
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1985227490A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain large output beams having equal phase by inclining a plurality of active regions formed on a substrate from the vertical direction to a cleavage plane for projecting beams. CONSTITUTION:An N-clad layer 2, an active layer 3, a P-clad layer 4 and an N- cap layer 5 are shaped on an N conduction type substrate 1 in succession. Striped conductive regions 6 as striped electrodes are formed on the layer 3. A beam projecting surface 7 shapes a cleavage plane, and laser beams 8 are projected in the predetermined direction. In the constitution, a laser is arranged to an array shape, and the laser resonator surface 7 (the cleavage plane of a crystal) is inclined by theta to the direction of stripes of the laser. When beams leak from a waveguide and are projected into adjacent lasers as shown in dotted lines 9, optical couplings are generated mutually, and each laser element is synchronized at the same phase and emits light. Accordingly, large output beams having equal phase can be obtained.
公开日期	1985-11-12
申请日期	1985-04-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76281]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	KURODA TAKAROU,KAJIMURA TAKASHI,KASHIWADA YASUTOSHI,et al. Semiconductor laser. JP1985227490A. 1985-11-12.

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