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	Visible semiconductor laser
	FUJIMOTO AKIRA; WATANABE HIDEAKI; SHIMURA MIKIHIKO; AKASAKI ISAMU
	1985-04-12
著作权人	TATEISHI DENKI KK
专利号	JP1985063980A
国家	日本
文献子类	发明申请
其他题名	Visible semiconductor laser
英文摘要	PURPOSE:To enable the titled device to have a thick grown layer between an active layer and a substrate by reduction of the winding of the active layer by a method wherein part of a clad layer is replaced by a buffer layer composed of InGaAsP of a small energy gap. CONSTITUTION:An In0.12Ga0.88As0.34P0.68 is grown on an N type GaAs0.61P0.39 substrate 21 by the liquid phase growing method as the buffer layer 29. Next, a Te-doped In0.26Ga0.74As0.05P0.95 as the N type clad layer 22, a non-doped In0.15 Ga0.85As0.30P0.70 as the active layer 23, and a Zn-doped In0.26Ga0.74As0.05p0.95 as the P type clad layer are successively liquid-grown, respectively. After adhesion of an SiO2 film 25 on the clad layer 24 by the high frequency sputtering method, a stripe 28 is formed by etching of the film 25 by the photolithography method. Electrodes 26 and 27 made of an Au series alloy are formed on the P- side and the N-side by the vaccum vapor deposition method, respectively. Then, the laser diode is completed through cleavage and dicing.
公开日期	1985-04-12
申请日期	1983-09-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76204]
专题	半导体激光器专利数据库
作者单位	TATEISHI DENKI KK
推荐引用方式 GB/T 7714	FUJIMOTO AKIRA,WATANABE HIDEAKI,SHIMURA MIKIHIKO,et al. Visible semiconductor laser. JP1985063980A. 1985-04-12.

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