QQ客服 官方微博 反馈留言

	Distributed feedback type semiconductor laser
	KITAMURA MITSUHIRO
	1984-09-18
著作权人	NIPPON DENKI KK
专利号	JP1984165478A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback type semiconductor laser
英文摘要	PURPOSE:To sufficiently reduce a thermal deterioration and meltback due to a diffraction grating by forming a current block layer on the overall surface except the vicinity of a mesa stripe, and covering the periphery of an active layer with a semiconductor layer having large energy gap and small refractive index. CONSTITUTION:A hetero structure semiconductor wafer is mesa etched to form a mesa stripe 4. Subsequently, the second crystal growth for forming BH is executed. First, a non-doped In0.59Ga0.41As0.90P0.10 active layer 5 corresponding to 55mum of light emitting wavelength, and a P type In0.72Ga0.28As0.61P0.39 meltback preventing layer 6 corresponding to 3mum of light emitting wavelength are all laminated sequentially on the overall surface except the side faces of the stripe 4. Then, a P type InP clad layer 7 is grown over the entire surface to cover the mesa, and an N type InP current block layer 8 is grown over a P type InP buried layer 9 and a P type In0.85Ga0.15As0.33P0.67 electrode layer 10 corresponding to 1mum of emitting light wavelength on the overall surface. This second LPE growth is executed by setting 650 deg.C of source temperature and 630 deg.C of growing temperature of the active layer.
公开日期	1984-09-18
申请日期	1983-03-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74687]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	KITAMURA MITSUHIRO. Distributed feedback type semiconductor laser. JP1984165478A. 1984-09-18.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。