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	Manufacture of semiconductor laser
	UCHIDA MAMORU
	1991-02-12
著作权人	NEC CORP
专利号	JP1991032084A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To prevent generation of lattice defect and distortion and deterioration of characteristics by forming a non-absorbing region for the laser light on the end surface and controlling this region so as to be not larger than a predetermined value in the vicinity of the end surface. CONSTITUTION:An n-type AlGaAs clad layer 102, a quantum well active layer 103, a p-type AlGaAs clad layer 104, a p-type cap layer 105 are formed on an n-type GaAs substrate 101 through molecular beam epitaxial growth process which is excellent in controlling film thickness. A coating 106, with desired reflectivity, is applied onto the end surface of a resonator of a semiconductor laser having a quantum well structure in the active layer 103, and it is further coated with another higher reflective material coat 107. Then, after continuous drive for a predetermined period of time by a current larger than the oscillation threshold value, only the coat 107 is removed and a non-absorbing region for the laser light is formed. This region can be controlled so as to be not larger than 3mum, and the fault such as generation of lattice defect and distortion and deterioration of characteristics can be prevented without exerting an influence upon the waveguide mechanism.
公开日期	1991-02-12
申请日期	1989-06-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74301]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	UCHIDA MAMORU. Manufacture of semiconductor laser. JP1991032084A. 1991-02-12.

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