QQ客服 官方微博 反馈留言

	Optical semiconductor device
	KAMIGUCHI, YUZO; HIRAYAMA, YUZO; SAHASHI, MASASHI
	2000-03-28
著作权人	KABUSHIKI KAISHA TOSHIBA
专利号	US6043515
国家	美国
文献子类	授权发明
其他题名	Optical semiconductor device
英文摘要	An optical semiconductor device has a structure in which a semiconductor active layer is sandwiched by a p-type semiconductor cladding layer and an n-type semiconductor cladding layer and a p-type contact layer is formed on the p-type semiconductor cladding layer side and an n-type contact layer is formed on the n-type semiconductor cladding layer side, wherein two ferromagnetic layers are formed on the n-type contact layer and two ferromagnetic layers are formed on the p-type contact layer. Magnetization directions of a pair of ferromagnetic layers vertically opposed to each other are set to be parallel to each other, and the magnetization directions of adjacent ferromagnetic layers are inverted to each other.
公开日期	2000-03-28
申请日期	1997-09-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/73872]
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	KAMIGUCHI, YUZO,HIRAYAMA, YUZO,SAHASHI, MASASHI. Optical semiconductor device. US6043515. 2000-03-28.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。