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	Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
	CHUA, SOON JIN; ZHOU, HAILONG; LIN, JIANYI; PAN, HUI
	2011-05-31
著作权人	NATIONAL UNIVERSITY OF SINGAPORE
专利号	US7951639
国家	美国
文献子类	授权发明
其他题名	Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
英文摘要	A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm−2, which will find important applications in future electronic and optoelectronic devices.
公开日期	2011-05-31
申请日期	2008-10-24
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/73725]
专题	半导体激光器专利数据库
作者单位	NATIONAL UNIVERSITY OF SINGAPORE
推荐引用方式 GB/T 7714	CHUA, SOON JIN,ZHOU, HAILONG,LIN, JIANYI,et al. Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template. US7951639. 2011-05-31.

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