| Semiconductor light emitting device | |
| TAKAO, MASAKAZU; SAKAI, MITSUHIKO; SENDA, KAZUHIKO | |
| 2015-11-24 | |
| 著作权人 | ROHM CO., LTD. |
| 专利号 | US9196808 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate; a metal layer disposed on the GaAs substrate; and a light emitting diode structure. The light emitting diode structure includes a patterned metal contact layer and a patterned insulating layer disposed on the metal layer, a p type cladding layer disposed on the patterned metal contact layer and the patterned insulating layer, a multi-quantum well layer disposed on the p type cladding layer, an n type cladding layer disposed on the multi-quantum well layer, and a window layer disposed on the n type cladding layer. The GaAs substrate and the light emitting diode structure are bonded by using the metal layer. |
| 公开日期 | 2015-11-24 |
| 申请日期 | 2014-05-23 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/72266]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | TAKAO, MASAKAZU,SAKAI, MITSUHIKO,SENDA, KAZUHIKO. Semiconductor light emitting device. US9196808. 2015-11-24. |
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