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	Stem for semiconductor laser
	ISHII MITSUO; HASEGAWA KAZUYOSHI
	1990-01-24
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990021685A
国家	日本
文献子类	发明申请
其他题名	Stem for semiconductor laser
英文摘要	PURPOSE:To dissolve the coming-off of an LDD chip and a submount and the deviation of the positional accuracy and the deviation of the angular accuracy of the chip and the submount without damaging the flatness of the bonding connection surface of a heat sink and to contrive the improvement of the reliability of the tilte stem by a method wherein the configuration of the upper end surface, which, of the heat sink, is connected continuously to the bonding connection surface vertical to the surface of the stem, is formed into the configuration of a curved surface with a prescribed radius. CONSTITUTION:An upper end surface 6 of a heat sink 4 formed integrally with a stem 3 on the upper surface of the stem 3 is formed continuously to a bonding connec tion surface 5 of the sink 4 through a curved surface with a radius R. Therefore, even if the stem 3 is plated by a barrel system, the sink 4 is hardly, subjected to deformation. Accordingly, a rise due to a deformation is not generated on the surface 5, the flatness of the surface 5 is never damaged, and even if the stem 3 is miniatur ized, the flatness is sufficiently secured. Therefore, a short adhesive strength due to the coming-off of a chip and a submount and the deviation of the positional accu racy, the deviation of the angular accuracy and so on of the chip and the submount are eliminated and the improvement of the reliability of the stem and the improvement of the accuracy of the stem can be attained.
公开日期	1990-01-24
申请日期	1988-07-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70854]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ISHII MITSUO,HASEGAWA KAZUYOSHI. Stem for semiconductor laser. JP1990021685A. 1990-01-24.

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