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	Semiconductor laser
	SASAKI YOSHIHIRO
	1988-11-10
著作权人	NEC CORP
专利号	JP1988273388A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To enhance the yield and the reliability of a semiconductor laser by forming a semiconductive metal bump perpendicular to the resonator direction in parallel with a light irradiating face on an electrode near the active layer of the laser as a packing in case of depositing a dielectric substance thin film on the irradiating face. CONSTITUTION:A striplike bump 3 of 4-12mum of width and 2-7mum of height is provided at a distance of 5-20mum from an irradiating face 2 perpendicularly to a resonator direction parallel to the face 2 on an electrode 2 near an active layer. When the bump 2 is retained by a spring 8, a gap between an Si bar 6 and the bar 6 of a semiconductor laser is blocked, a dielectric substance is rounded not to adhere to an electrode near the active layer. Thus, even after it is deposited, its bondability of a heat absorber due to fusion bonding is improved, its heat resistance is reduced, and its yield and reliability are improved.
公开日期	1988-11-10
申请日期	1987-04-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70776]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	SASAKI YOSHIHIRO. Semiconductor laser. JP1988273388A. 1988-11-10.

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