| Multibeam semiconductor laser device | |
| SHIMADA KATSUTO | |
| 1988-06-13 | |
| 著作权人 | SEIKO EPSON CORP |
| 专利号 | JP1988141385A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multibeam semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the property of heat radiation by gluing a base stand equipped with the paired number of a conductive material interconnection for laser beam and a multibeam semiconductor laser element on a heat sink through soldering materials with a junction-down method. CONSTITUTION:After conductive materials for outgoing electrodes such as Au form a film on a single crystal sapphire (Al2O3) heat sink 101 with a spatter process, its film is treated by patterning with an ordinary photolighographic process and then, the outgoing electrodes 103 are formed into a based stand. Further, a multibeam semiconductor laser element 104 is glued through a soldering material with a junction-down method and a common electrode as well as the outgoing electrode 103 are treated by bonding with gold wires 105 and then, the interconnection of respective electrodes is formed. |
| 公开日期 | 1988-06-13 |
| 申请日期 | 1986-12-04 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70739]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA KATSUTO. Multibeam semiconductor laser device. JP1988141385A. 1988-06-13. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论