| Semiconductor light emitting device | |
| IMAI HAJIME | |
| 1987-06-12 | |
| 著作权人 | FUJITSU LTD |
| 专利号 | JP1987130580A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To control an oscillating wavelength of a laser by controlling temperature of a semiconductor laser in response to a received output of a diffracted light due to an emission of a diffraction grating. CONSTITUTION:A diffraction grating 4 is irradiated with a part of an emitted light of a semiconductor laser 1, and a diffracted light is generated. The diffracted light in which when an oscillation wavelength is increased, its output becomes small is received and detected by a detector 5 to control temperature of the laser 1 through a controller 6 and a temperature control mechanism 2, thereby setting the oscillation wavelength to a predetermined value. Thus, the oscillation wavelength of the laser is stably controlled to a predetermined constant value. If the supplying current is controlled instead of the temperature, the same result is obtained. |
| 公开日期 | 1987-06-12 |
| 申请日期 | 1985-12-02 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70671]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IMAI HAJIME. Semiconductor light emitting device. JP1987130580A. 1987-06-12. |
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