| No title available | |
| - | |
| 1972-03-08 | |
| 著作权人 | - |
| 专利号 | GB1266084A |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | No title available |
| 英文摘要 | 1,266,084. Lasers. WESTERN ELECTRIC CO. Inc. 10 June, 1970 [16 June, 1969], No. 28085/70. Headings H1C and H1K. [Also in Divisions C4 and G1] In a laser communications system, a semiconductor laser is operated under conditions of temperature and pumping energy such that self-induced spontaneous pulses occur in its output, and the pulse repetition frequency (PRF) is controlled by incident low power microwave energy. The equivalent circuit of Fig. 1 shows a PN junction laser 10 biased by a pumping source 11 which supplies a continuous current of 1??1-3 times the lasing threshold current. At temperatures of 77-110 K spontaneous pulses occur for GaAs diodes, and the PRF is locked on to microwave signals from a source 12. The lazer diode 10 forms the termination of a transmission line connected to the source 12, and the PRF varies according to information from a modulator 13 which controls the microwave frequency. Several lasers may be operated at the same basic PRF, Fig. 2 (not shown), each laser having a phase slightly different from the others to prevent the pulses overlapping. This forms the basis for a time multiplexed communications system, the receiver being a P-I-N or Schottky barrier photodiode or an array thereof. Laser having differing output frequencies may be used. The control of the PRF by microwaves is stated also to be applicable to electron beam or optically pumped semiconductor lasers. Diode manufacture.-The N-type diode sub strate is a slice of Te doped GaAs having a free electron concentration of 3-4??5 x 1018 electrons/cc. A P-type region is diffused into the substrate by the box method, a 2% solution of Zn in Ga saturated with GaAs acting as the source. A diffusion time of 4 hours at 800 C. forms a junction of 1??8 microns. The substrate is then covered with a protective SiO 2 layer and heated with pure As in a quartz ampoule at 850 C. for 4 hours before quenching to 0 C. Windows are then etched in the oxide covering the P-type side and the areas exposed are doped by a ZnAs source using the box method. Electrical contacts are applied to the doped regions, the contacts comprising 500 Ti, 5000 Ag and 1000 Au. The N-type side is then lapped to 105 microns and electrical contacts of 2000 Sn, 4000 Ni and 4000 Au applied. Scribing and cleaving forms individual Fabry-Perot cavities, and the finished laser comprises one of these mounted on a copper heat sink in a microwave package which is connected to a transmission line. |
| 公开日期 | 1972-03-08 |
| 申请日期 | 1970-06-10 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70388]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | - |
| 推荐引用方式 GB/T 7714 | -. No title available. GB1266084A. 1972-03-08. |
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