Semiconductor laser device
YAMANAKA KATSUHIKO; MIURA AKIRA; YAGIHARA TAKESHI
1985-11-08
著作权人YOKOKAWA HOKUSHIN DENKI KK
专利号JP1985224134A
国家日本
文献子类发明申请
其他题名Semiconductor laser device
英文摘要PURPOSE:To improve an S/N ratio by driving a semiconductor laser by the signal on which high-frequency current is superposed and oscillating the laser with non-single mode. CONSTITUTION:The high-frequency current having the frequency, for example, 2.5-4GHz for returning the oscillation mode of the semiconductor laser LD to multimodes prior to lapse of the time when said mode changes to single mode is emitted from a high-frequency current source G and is superposed on the output current of a DC current source I via a capacitor C. The laser LD is thus driven by the signal on which the high frequency is superposed. The amplitude of the current source G is so set as to cut off thoroughly the threshold current of the laser LD. The characteristic having the stable S/N ratio is thus obtd. even if the optical length and the frequency of the high-frequency current vary to some extent.
公开日期1985-11-08
申请日期1984-04-20
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/68718]  
专题半导体激光器专利数据库
作者单位YOKOKAWA HOKUSHIN DENKI KK
推荐引用方式
GB/T 7714
YAMANAKA KATSUHIKO,MIURA AKIRA,YAGIHARA TAKESHI. Semiconductor laser device. JP1985224134A. 1985-11-08.
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