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	Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy
	CHENG, HWA; DEPUYDT, JAMES M; HAASE, MICHAEL A; QIU, JUN
	1993-12-30
著作权人	MINNESOTA MINING AND MANUFACTURING COMPANY
专利号	AU1993043788A1
国家	澳大利亚
文献子类	发明申请
其他题名	Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy
英文摘要	A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200 DEG C in an MBE chamber. Sources of Cd, Zn, and Se are injected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum well layer including overlaying monolayers of Cd, Zn and Se. The quantum well layer is described by the notation [(CdSe)m(ZnSe)n]p where m, n and p are integers.
公开日期	1993-12-30
申请日期	1993-05-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67721]
专题	半导体激光器专利数据库
作者单位	MINNESOTA MINING AND MANUFACTURING COMPANY
推荐引用方式 GB/T 7714	CHENG, HWA,DEPUYDT, JAMES M,HAASE, MICHAEL A,et al. Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy. AU1993043788A1. 1993-12-30.

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