QQ客服 官方微博 反馈留言

	Method of forming electrode of semiconductor laser
	SUZAKI SHINZO
	1989-06-29
著作权人	FUJIKURA LTD
专利号	JP1989165192A
国家	日本
文献子类	发明申请
其他题名	Method of forming electrode of semiconductor laser
英文摘要	PURPOSE:To increase the strength against wire bonding and decrease the fraction of defective, by forming a metal layer sticking well to an insulation film on an ohmic electrode and said insulation film, a gold layer on said metal layer, and a gold plated layer on said gold layer. CONSTITUTION:An insulation film 7 (SiO2) having a window 9 made just on a clad layer 4 is formed on a chip comprising a board 2 on which an active layer 3, the clad layer 4, and first and second buried layers 5 and 6 are formed. Forming a first electrode 1 (Au/Sn) and a second electrode 8 (Au/Zn) on the upper and lower surfaces of the chip and then eliminating the electrode 8 on the insulation film 7 form the electrode 8 only on the window portion 9. A Cr layer 11 and an Au layer 12 are formed on the upper surface of the chip in this order, photoresist 13 is applied to close the window 9, etched, and eliminated, and then an Au plating layer 14 is formed on the Au layer 12 to produce a wire bonding pad. This increases the adhesion of the SiO2 film 7, the Cr layer 11, and Au layer 12 and the strength against wire bonding.
公开日期	1989-06-29
申请日期	1987-12-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67617]
专题	半导体激光器专利数据库
作者单位	FUJIKURA LTD
推荐引用方式 GB/T 7714	SUZAKI SHINZO. Method of forming electrode of semiconductor laser. JP1989165192A. 1989-06-29.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。