Optoelectronic semiconductor device comprising a waveguide and method of manufacturing such a device
VENHUIZEN, ANTONIUS HENRICUS JOHANNES
1993-04-14
著作权人PHILIPS ELECTRONICS N.V.
专利号EP0536829A1
国家欧洲专利局
文献子类发明申请
其他题名Optoelectronic semiconductor device comprising a waveguide and method of manufacturing such a device
英文摘要Optoelectronic semiconductor devices which have a groove-shaped waveguide in an oxide layer provided on a silicon substrate are compact, easy to manufacture, and - when the waveguide comprises a non-linear optical material - applicable inter alia for frequency doubling of laser radiation. In the known device, scattering losses occur in the waveguide owing to the roughness of the groove which arises during etching of the groove. In a device according to the invention, the groove and a portion of the oxide layer are formed by local, preferably thermal oxidation of the silicon substrate. The groove formed at the area of the oxidation mask has a smoother surface and as a result the waveguide has lower losses. When the device comprises a GaAs/AlGaAs diode laser, it forms an efficient, compact, inexpensive and blue-emitting laser source which is suitable for use in an optical disc system. Preferably, the diode laser is situated in a deeper and wider further groove in the oxide layer. In a method according to the invention, a layer of silicon oxide and a groove therein are formed simultaneously through the use of local oxidation. Grooves of different widths and depths are obtained in that masks of various widths are used during this.
公开日期1993-04-14
申请日期1992-09-29
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/67155]  
专题半导体激光器专利数据库
作者单位PHILIPS ELECTRONICS N.V.
推荐引用方式
GB/T 7714
VENHUIZEN, ANTONIUS HENRICUS JOHANNES. Optoelectronic semiconductor device comprising a waveguide and method of manufacturing such a device. EP0536829A1. 1993-04-14.
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