Optoelectronic semiconductor device comprising a waveguide and method of manufacturing such a device | |
VENHUIZEN, ANTONIUS HENRICUS JOHANNES | |
1993-04-14 | |
著作权人 | PHILIPS ELECTRONICS N.V. |
专利号 | EP0536829A1 |
国家 | 欧洲专利局 |
文献子类 | 发明申请 |
其他题名 | Optoelectronic semiconductor device comprising a waveguide and method of manufacturing such a device |
英文摘要 | Optoelectronic semiconductor devices which have a groove-shaped waveguide in an oxide layer provided on a silicon substrate are compact, easy to manufacture, and - when the waveguide comprises a non-linear optical material - applicable inter alia for frequency doubling of laser radiation. In the known device, scattering losses occur in the waveguide owing to the roughness of the groove which arises during etching of the groove. In a device according to the invention, the groove and a portion of the oxide layer are formed by local, preferably thermal oxidation of the silicon substrate. The groove formed at the area of the oxidation mask has a smoother surface and as a result the waveguide has lower losses. When the device comprises a GaAs/AlGaAs diode laser, it forms an efficient, compact, inexpensive and blue-emitting laser source which is suitable for use in an optical disc system. Preferably, the diode laser is situated in a deeper and wider further groove in the oxide layer. In a method according to the invention, a layer of silicon oxide and a groove therein are formed simultaneously through the use of local oxidation. Grooves of different widths and depths are obtained in that masks of various widths are used during this. |
公开日期 | 1993-04-14 |
申请日期 | 1992-09-29 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/67155] |
专题 | 半导体激光器专利数据库 |
作者单位 | PHILIPS ELECTRONICS N.V. |
推荐引用方式 GB/T 7714 | VENHUIZEN, ANTONIUS HENRICUS JOHANNES. Optoelectronic semiconductor device comprising a waveguide and method of manufacturing such a device. EP0536829A1. 1993-04-14. |
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