High-power semiconductor laser based on vcsel and optical convergence method therefor

CORC > 西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所 > 半导体激光器专利数据库

	High-power semiconductor laser based on vcsel and optical convergence method therefor
	LI, YANG; LI, DELONG
	2017-11-16
著作权人	SANHE LASERCONN TECH CO., LTD.
专利号	US20170331254A1
国家	美国
文献子类	发明申请
其他题名	High-power semiconductor laser based on vcsel and optical convergence method therefor
英文摘要	Provided is a high-power semiconductor laser based on VCSEL, comprising a VCSEL laser module. The VCSEL laser module includes a VCSEL chip array (1) consisting of a plurality of VCSEL chips (10) and an inner wall reflection optical transmission device (2) which is arranged in front of a light emergent face of the VCSEL chip array (1); and the light emergent face of the VCSEL chip array (1) is used for secondarily reflecting the reflected light reflected by a target object (3) and the inner wall reflection optical transmission device (2). Also provided is a packaging structure for the high-power semiconductor laser. The VCSEL chip array (1) is packaged by an inwardly concave arc-shaped heat sink (4), so that the purpose of converging the laser light beam near a centre position can be achieved.
公开日期	2017-11-16
申请日期	2014-12-07
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66518]
专题	半导体激光器专利数据库
作者单位	SANHE LASERCONN TECH CO., LTD.
推荐引用方式 GB/T 7714	LI, YANG,LI, DELONG. High-power semiconductor laser based on vcsel and optical convergence method therefor. US20170331254A1. 2017-11-16.