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	Semiconductor gain medium which can generate THz radiation
	MAURO PEREIRA
	2010-05-26
著作权人	SHEFFIELD HALLAM UNIVERSITY
专利号	GB2465433A
国家	英国
文献子类	发明申请
其他题名	Semiconductor gain medium which can generate THz radiation
英文摘要	A semiconductor gain medium for example, GaAs and AlGaAs with alternating intrinsic and p-doped regions or InGaAs-InP quantum well-multiple barrier structures are described which can generate THz frequency electromagnetic radiation. The gain medium is configured so as to have a valence band having a plurality of sub-band states. The energy spacing between a first sub-band state and a second sub-band state is such that a hole transitioning from the first sub-band state to the second sub-band state will emit TE mode electromagnetic radiation in the THz frequency range. A method of generating THz frequency electromagnetic radiation from the semiconductor gain medium is also described. A hole is introduced in a sub-band state of a valence band of the semi-conductor medium. The hole is allowed to transition into a lower energy sub-band state of the valence band of the semi-conductor medium and to emit TE mode electromagnetic radiation in the THz frequency range. The gain medium may be used in a vertical cavity emitting laser (VCSEL, 700 Figure 7). The invention may use k-space filtering resulting from intervalence transitions in semiconductor structures operating at high temperatures.
公开日期	2010-05-26
申请日期	2008-11-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66436]
专题	半导体激光器专利数据库
作者单位	SHEFFIELD HALLAM UNIVERSITY
推荐引用方式 GB/T 7714	MAURO PEREIRA. Semiconductor gain medium which can generate THz radiation. GB2465433A. 2010-05-26.

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