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	Double-wavelength semiconductor laser
	TAKAMURA TAKASHI
	1989-11-07
著作权人	SEIKO EPSON CORP
专利号	JP1989276686A
国家	日本
文献子类	发明申请
其他题名	Double-wavelength semiconductor laser
英文摘要	PURPOSE:To obtain a low threshold and a high stability and control the widths of stripe ribs easily by a method wherein two stripe ribs with different widths are formed on a double-heterojunction substrate whose active layers made of III-V compound semiconductor have quantum well structures and the side surfaces of the ribs are filled with II-VI compound semiconductor. CONSTITUTION:On an n-type GaAs substrate 101, n-type Al0.3Ga0.7As cladding layers 102 and 108, GaAs active layers 103 and 109, p-type Al0.3Ga0.7As cladding layers 104 and 110 and p-type GaAs contact layers 105 and 111 are successively built up to form a double-heterojunction substrate. After the double- heterojunction substrate is etched, ZnSe layers 107 are selectively built up on the side surfaces of the ribs. The thicknesses of the GaAs active layers 103 and 109 are 100Angstrom in order to form quantum wells. The widths of the active layers of lasers are 1mum and 2mum and, when currents are injected into the lasers, the lasers oscillate lights with short wavelengths.
公开日期	1989-11-07
申请日期	1988-04-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66210]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	TAKAMURA TAKASHI. Double-wavelength semiconductor laser. JP1989276686A. 1989-11-07.

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