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	Manufacture of semiconductor laser, and semiconductor laser
	KONDO MASATO
	1991-06-04
著作权人	FUJITSU LTD
专利号	JP1991131081A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser, and semiconductor laser
英文摘要	PURPOSE:To form all layers at a lower temperature thereby avoiding the reevaporation of In so as to realize surface rate-determining epitaxial growth by selecting a compound semiconductor material of composition where Al is not contained. CONSTITUTION:The part, which is the mesa type emitting region of a semiconductor laser and consists of an n-GaAs substrate 1, an n-Ga0.5In0.5P clad layer 2, an n-GaAs guide layer 3, a Ga0.7In0.3As well layer 4, an n-GaAs guide layer 5, and a p-Ga0.5In0.5P clad layer 6, is epitaxially grown. For the Ga0.5In0.5P, the grating constant is the same as GaAs, and it does not contain Al in composition, so epitaxial growth is possible over a wide temperature range, and even in case that the growth temperature is made relatively lower to avoid such inconvenience as the reevaporation of In and the compound formation in vapor phase, the growth layer exhibits favorable crystal properties. What is more, the epitaxial growth is executed over the entire growth temperature 500-650 deg.C.
公开日期	1991-06-04
申请日期	1989-10-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66048]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	KONDO MASATO. Manufacture of semiconductor laser, and semiconductor laser. JP1991131081A. 1991-06-04.

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