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	Manufacture of 3-dimensional quantum well semiconductor laser
	YANASE TOMOO; NISHI KENICHI; KATOU YOSHITAKE; YAMAGUCHI MASAYUKI
	1985-12-11
著作权人	NIPPON DENKI KK
专利号	JP1985250684A
国家	日本
文献子类	发明申请
其他题名	Manufacture of 3-dimensional quantum well semiconductor laser
英文摘要	PURPOSE:To reduce the temperature dependency of an oscillating threshold value by forming the ultrafine region of the size that a quantum well effect is presented by partly etching a semiconductor layer, burying it therein, and forming an active region having a 3-dimensional quantum well structure. CONSTITUTION:An N type InP is grown as an N type clad layer 12 on an N type InP single crystal substrate 13, and further InXGa1-XAsYP1-Y of narrow energy gap from the InP is epitaxially grown as an active region 1 Then, only round regions 21 aligned are masked, and the region 22 except the region 21 is amplified. A P type InP layer is epitaxially grown as a P type clad layer 34 on the ultrafine projection formed in this manner, and thus the region 31 exhibits the quantum effect. Further, the region 31 is used as a buried striped structure of current implanting region. The 3-dimensional quantum well laser manufactures according to this method exhibits remarkably quantum well effect and accordingly remarkably reduces the temperature dependency of the oscillating threshold current.
公开日期	1985-12-11
申请日期	1984-05-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65831]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	YANASE TOMOO,NISHI KENICHI,KATOU YOSHITAKE,et al. Manufacture of 3-dimensional quantum well semiconductor laser. JP1985250684A. 1985-12-11.

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