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	Passivation method for 3-5 group compound semiconductor
	ADAKA SABUROU; OOUCHI HIROBUMI; AIKI KUNIO; SASAKI YOSHIMITSU
	1983-07-27
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1983125832A
国家	日本
文献子类	发明申请
其他题名	Passivation method for 3-5 group compound semiconductor
英文摘要	PURPOSE:To impove the characteristics of a device, to lengthen its life and to ameliorate its reliability by turning the surface of the III-V group compound semiconductor into passivity by sputtering-etching the surface in N2. CONSTITUTION:With the III-V group compound semiconductor, it is a compound consisting of two elements or more and reacts with O2 in atmospheric air, there is an unstable natural oxide film on the surface, and the excellent characteristics and reliability of an element are impeded. The natural oxide film is removed through sputtering etching in N2, in which damage due to sputtering is difficult to be generated, without using an inert gas such as Ar while divergence from the stoichiometrical theory of the surface is avoided. That is, a dangling bond generated due to divergence is reacted with N, and the generation of the dangling bond is prevented. Accordingly, the leakage currents of the surface decrease, and the compound semiconductor element having long life and high reliability is obtained. When the semiconductor is sputtering-etched in N2 and the surface is coated with an insulating film made of SiO2, Al2O3, etc., the method is more effective.
公开日期	1983-07-27
申请日期	1982-01-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64511]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	ADAKA SABUROU,OOUCHI HIROBUMI,AIKI KUNIO,et al. Passivation method for 3-5 group compound semiconductor. JP1983125832A. 1983-07-27.

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