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	Intersubband mid-infrared electroluminescent semiconductor devices
	BOTEZ, DAN; MIRABEDINI, ALI R.; XU, DAPENG P.; MAWST, LUKE
	2005-07-21
著作权人	WISCONSIN ALUMNI RESEARCH FOUNDATION
专利号	WO2005065304A2
国家	世界知识产权组织
文献子类	发明申请
其他题名	Intersubband mid-infrared electroluminescent semiconductor devices
英文摘要	A semiconductor laser and light-emitting device is defined. The device comprises an electron injector (see Fig. 2, Character 12) and an active region (see Fig. 2, Character 14) adjacent to the electron injector. The active region (see Fig. 2, Character 14) includes at least one deep quantum well with barrier layers adjacent to either side of the quantum well or wells such that electrons injected from the electron injector into a high energy level of the quantum well relax to a lower energy level with the emission of a photon and are transmitted out to a region beyond the last barrier layer of the active region. The electron injector includes quantum well layers. The bottom of each deep quantum well or wells in the active region is lower in energy than the bottoms of the quantum well layers in the electron injector. The device may further comprise at least two stages wherein each stage contains an electron injector and an active region. The stages are separated by semiconductor layers that allow the transfer of electrons from the active region of one stage to the electron injector of the next stage.
公开日期	2005-07-21
申请日期	2004-12-29
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64435]
专题	半导体激光器专利数据库
作者单位	WISCONSIN ALUMNI RESEARCH FOUNDATION
推荐引用方式 GB/T 7714	BOTEZ, DAN,MIRABEDINI, ALI R.,XU, DAPENG P.,et al. Intersubband mid-infrared electroluminescent semiconductor devices. WO2005065304A2. 2005-07-21.

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