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	Manufacture of protective film for protecting end face of semiconductor laser
	TAKAMURA TAKASHI
	1989-10-31
著作权人	SEIKO EPSON CORP
专利号	JP1989272181A
国家	日本
文献子类	发明申请
其他题名	Manufacture of protective film for protecting end face of semiconductor laser
英文摘要	PURPOSE:To obtain a method of monitoring reflectance directly by using a semiconductor laser oscillating at a wavelength similar to that of a semiconductor laser to be monitored as a monitoring light source. CONSTITUTION:An active layer is formed of GaAs, and Al2O3 is vapor-deposited on the end face of a semiconductor laser 104 oscillating at a wavelength of 870nm and on a GaAs substrate 105 for monitoring. For monitoring, a semiconductor laser oscillating at 870nm is used in constant optical output operation. An optical system 107 is used for making the laser beam parallel with the optical axis, which are projected onto the monitoring GaAs substrate 105, and the light reflected from the substrate 105 is received by a monitoring photodiode 108. Reflectance of the GaAs coated with Al2O3 can be controlled between 40% and 3% by altering the thickness of the Al2O3 film.
公开日期	1989-10-31
申请日期	1988-04-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64303]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	TAKAMURA TAKASHI. Manufacture of protective film for protecting end face of semiconductor laser. JP1989272181A. 1989-10-31.

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