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	Two-wavelength semiconductor laser
	TAKAMURA TAKASHI
	1991-02-08
著作权人	SEIKO EPSON CORP
专利号	JP1991030388A
国家	日本
文献子类	发明申请
其他题名	Two-wavelength semiconductor laser
英文摘要	PURPOSE:To contrive the improvement of the balance of the oscillation threshold value of a laser by a method wherein a first clad layer, a first active layer, a second clad layer, a first contact layer, a third clad layer, a second active layer, a fourth clad layer and a second clad layer are piled one after another on a substrate. CONSTITUTION:At least a first clad layer 103 having a conductivity type identical with that of a substrate 101, a first active layer 104, a second clad layer 105 having a second conductivity type, a first contact layer 106 having a second conductivity type, a third clad layer 110 having a second conductivity type, a second active layer 111, a fourth clad layer 112 having a first conductivity type and a second contact layer 113 having a first conductivity type are piled one after another on the substrate 101, which has a first conductivity type and consists of a semiconductor. Thereby, a two-wavelength semiconductor laser, which has little leakage current, has the large freedom of an oscillation wavelength and has the good balance of an oscillation threshold value, can be obtained.
公开日期	1991-02-08
申请日期	1989-06-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64085]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	TAKAMURA TAKASHI. Two-wavelength semiconductor laser. JP1991030388A. 1991-02-08.

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