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	Manufacture of visible ray semiconductor laser device
	KAGEYAMA SHIGEMI; ARIMOTO SATOSHI; KONNO NOBUAKI
	1990-08-03
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990196487A
国家	日本
文献子类	发明申请
其他题名	Manufacture of visible ray semiconductor laser device
英文摘要	PURPOSE:To obtain a gradient index visible semiconductor laser device having an IS(Inner Stripe) structure which has a low threshold and is easy to operate a fundamental mode by burying a 3mum or less intrastructure striped groove with a lower cladding layer AlGaInP until the surface of the groove is flattened, and such that a film thickness is 0.5mum or less. CONSTITUTION:A p type AlGaInP lower cladding layer 6 is made satisfactorily thin and is crystal-grown so as to provide a flattened surface. This is assured by the stripe width of a U-shaped groove and growing conditions. For example, if it is assumed that the U-shaped groove stripe width is 2mum, and that pressure, temperature, and a ratio of elements of groups V and III at growth are 76Torr, 680 deg.C, and 200, respectively, the thickness of the undercladding layer is about 0.4mum. The under cladding layer 6 is satisfactorily thin at the flattened portion, so that light emanating from an active layer 7 excepting the V-shaped groove stripe portion 11 is absorbed by a GaInP current blocking layer 5. Thus, the light is confined in the active layer located above the V-shaped groove stripe, which enables an oscillation in a fundamental mode.
公开日期	1990-08-03
申请日期	1989-01-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64080]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	KAGEYAMA SHIGEMI,ARIMOTO SATOSHI,KONNO NOBUAKI. Manufacture of visible ray semiconductor laser device. JP1990196487A. 1990-08-03.

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