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	Multibeam semiconductor laser device
	SHIMADA KATSUTO
	1988-06-13
著作权人	SEIKO EPSON CORP
专利号	JP1988141386A
国家	日本
文献子类	发明申请
其他题名	Multibeam semiconductor laser device
英文摘要	PURPOSE:To improve exceedingly the property of heat radiation of heat that is generated by a laser beam emitting part by forming alumina (Al2O3) as a heat sink on a silicon single crystal substrate and by gluing a multibeam semiconductor laser element to the heat sink with a junction-down method. CONSTITUTION:Alumina (Al2O3) 102 is deposited on a silicon single crystal substrate 101 with an ion-beam vaporization process and the like and is formed into a heat sink. Subsequently, after conductive materials for outgoing electrodes such as Au form a film on its heat sink with a spatter process, the film is treated by patterning with an ordinary photolithography process and then, the outgoing electrodes 103 are formed into a bese stand. An expansion coefficient of alumina (Al2O3) at a room temperature is 2-3X10K and is a match for the expansion coefficient of silicon 2,3X10K. Further, in view of the property of heat radiation, thermal conductivity of alumina (Al2O3) is 36 w/m.k and is a value enough to be used in stead of silicon. On the other hand, a multibeam semiconductor laser element 104 is is glued through soldering materials with a junctiondown method and a common electrode as well as the outgoing electrodes 103 are treated by bonding with gold wires 105 and then, the interconnection of respective electrode is formed.
公开日期	1988-06-13
申请日期	1986-12-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63055]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	SHIMADA KATSUTO. Multibeam semiconductor laser device. JP1988141386A. 1988-06-13.

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