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	Semiconductor laser and inspection device
	KAGEYAMA, TAKEO
	2019-10-03
著作权人	QD LASER, INC.
专利号	WO2019187666A1
国家	世界知识产权组织
文献子类	发明申请
其他题名	Semiconductor laser and inspection device
英文摘要	This semiconductor laser is characterized in that: a plurality of active layers are provided, each including a first reflection layer wherein an excitation light enters and an emission light is reflected, a second reflection layer provided in the layering direction of the first reflection layer and reflecting the emission light, a light-emitting layer sandwiched in the layering direction between the first reflection layer and the second reflection layer, layered in the layering direction and emitting the emission light caused by the excitation light, and first semiconductor layers sandwiching the light-emitting layer in the layering direction; a second semiconductor layer is provided between the first semiconductor layers of adjacent active layers of the plurality of active layers, and has a second band gap energy that is greater than the first band gap energy of first semiconductor layers; and, the closer to the first reflection layer side, the shorter the layering direction widths of the active layers of the plurality of active layers become.
公开日期	2019-10-03
申请日期	2019-02-06
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62412]
专题	半导体激光器专利数据库
作者单位	QD LASER, INC.
推荐引用方式 GB/T 7714	KAGEYAMA, TAKEO. Semiconductor laser and inspection device. WO2019187666A1. 2019-10-03.

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