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	Quantum-dot laser diode
	RAFAILOV, EDIK U.; ZOLOTOVSKAYA, SVETLANA; SOKOLOVSKI, SERGEI
	2011-12-22
著作权人	UNIVERSITY OF DUNDEE
专利号	US20110313407A1
国家	美国
文献子类	发明申请
其他题名	Quantum-dot laser diode
英文摘要	Aspects of the present disclosure relate to the field of laser technology, specifically semiconductor lasers, and to novel biomedical applications of such lasers, including novel methods of photodynamic therapy. Exemplary embodiments of the present disclosure include a semiconductor laser diode having an active region having a gain medium with one or more InGaAs/InAs quantum dot layers; and wherein the laser diode can be arranged in operation to emit laser light having a central wavelength within spectral range of wave lengths. The present embodiments further include a method of directly forming a reactive oxygen species (ROS), the method including exposing a medium having a potential source of ROS to a semiconductor laser diode, the semiconductor laser diode configured to emit laser light having a central wavelength within the spectral range.
公开日期	2011-12-22
申请日期	2011-06-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/61716]
专题	半导体激光器专利数据库
作者单位	UNIVERSITY OF DUNDEE
推荐引用方式 GB/T 7714	RAFAILOV, EDIK U.,ZOLOTOVSKAYA, SVETLANA,SOKOLOVSKI, SERGEI. Quantum-dot laser diode. US20110313407A1. 2011-12-22.

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