Gallium nitride-based light emitting device and method for manufacturing the same

	Gallium nitride-based light emitting device and method for manufacturing the same
	SAKAI, SHIRO; WANG, TAO
	2003-01-23
著作权人	SAKAI, SHIRO
专利号	US20030016526A1
国家	美国
文献子类	发明申请
其他题名	Gallium nitride-based light emitting device and method for manufacturing the same
英文摘要	For a light emitting device using gallium nitride (GaN), on a substrate are sequentially formed a GaN-based layer, an AlGaN-based layer, and a light emitting layer. To prevent cracks in the AGaN-based layer, the AlGaN-based layer is formed before planarization of the surface of the GaN layer on a surface of the GaN layer which is not planar. For a laser, the AlGaN-based layers serve as clad layers which sandwich the light emitting layer.
公开日期	2003-01-23
申请日期	2002-06-27
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/60846]
专题	半导体激光器专利数据库
作者单位	SAKAI, SHIRO
推荐引用方式 GB/T 7714	SAKAI, SHIRO,WANG, TAO. Gallium nitride-based light emitting device and method for manufacturing the same. US20030016526A1. 2003-01-23.