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	Semiconductor Structure with Stress-Reducing Buffer Structure
	SHATALOV, MAXIM S.; YANG, JINWEI; DOBRINSKY, ALEXANDER; SHUR, MICHAEL; GASKA, REMIGIJUS
	2017-04-20
著作权人	SENSOR ELECTRONIC TECHNOLOGY, INC.
专利号	US20170110628A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor Structure with Stress-Reducing Buffer Structure
英文摘要	A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.
公开日期	2017-04-20
申请日期	2016-12-28
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54753]
专题	半导体激光器专利数据库
作者单位	SENSOR ELECTRONIC TECHNOLOGY, INC.
推荐引用方式 GB/T 7714	SHATALOV, MAXIM S.,YANG, JINWEI,DOBRINSKY, ALEXANDER,et al. Semiconductor Structure with Stress-Reducing Buffer Structure. US20170110628A1. 2017-04-20.

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