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	Fabrication method for mirrors for integrated optical devices
	QUELLET, LUC; TREMBLAY, YVES
	2004-10-13
著作权人	DALSA SEMICONDUCTOR INC.
专利号	EP1312949A3
国家	欧洲专利局
文献子类	发明申请
其他题名	Fabrication method for mirrors for integrated optical devices
英文摘要	A method of making highly reflective mirrors on a wafer in the manufacture of photonic devices involves preheating a wafer to remove adsorbed volatile contaminants at a temperature between about 300 and 600°C. The wafer surface is etched at a temperature between about 300 and 600°C to remove absorbed and chemically absorbed contaminants in the presence of a plasma to prevent poisoning. The wafer surface is thoroughly cooled so as to as reduce the surface mobility of the impinging atoms during the subsequent metallic deposition. A deposition is then carried out on the cooled wafer of a gettering layer for gettering hydrogen, oxygen and nitrogen. A metallic reflective layer is then deposited in a deposition chamber, and finally the wafer is removed from the deposition chamber to prevent excessive bulk oxidation.
公开日期	2004-10-13
申请日期	2002-11-18
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/52911]
专题	半导体激光器专利数据库
作者单位	DALSA SEMICONDUCTOR INC.
推荐引用方式 GB/T 7714	QUELLET, LUC,TREMBLAY, YVES. Fabrication method for mirrors for integrated optical devices. EP1312949A3. 2004-10-13.

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