Heat sink for a semiconductor device | |
YOO, MYOUNG KI; BAIK, YOUNG-JOON; HONG, KYUNG TAE | |
2001-06-14 | |
著作权人 | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
专利号 | US20010003377A1 |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Heat sink for a semiconductor device |
英文摘要 | A heat sink for a semiconductor device comprises a tungsten-copper composite body and a diamond film coated on the surface of the body. A method for fabricating a heat sink for a semiconductor comprises the steps of fabricating a tungsten-copper composite heat sink, modifying a surface of the heat sink by selectively dissolving copper from the surface of the heat sink, carrying out a process for supplying nuclei for growth of a diamond film on the modified surface of the heat sink, and coating the thusly processed surface of the heat sink with a diamond film. Preferably, a process for etching of a tungsten grain precedes selective dissolution of the copper. |
公开日期 | 2001-06-14 |
申请日期 | 1999-07-19 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/52217] |
专题 | 半导体激光器专利数据库 |
作者单位 | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
推荐引用方式 GB/T 7714 | YOO, MYOUNG KI,BAIK, YOUNG-JOON,HONG, KYUNG TAE. Heat sink for a semiconductor device. US20010003377A1. 2001-06-14. |
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