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	Selective disordering of well structures by laser annealing
	BURNHAM, ROBERT D.; JOHNSON, NOBLE M.
	1987-03-31
著作权人	XEROX CORPORATION
专利号	US4654090
国家	美国
文献子类	授权发明
其他题名	Selective disordering of well structures by laser annealing
英文摘要	A method of converting selected areas of a semiconductor structure into a disordered alloy comprising a well feature epitaxially deposited on a semiconductor support, the well feature comprising at least one first well layer of narrow bandgap material deposited adjacent to at least a second layer of wider bandgap material or interposed between second and third layers of wider bandgap material. The disordered alloy exhibits higher bandgap and lower refractive index properties than the first layer. The method comprises the steps of (1) either placing the structure within a protective environment to prevent the escape of volatile components from the structure during subsequent processing or alternatively, covering the structure with a protective coating to prevent the escape of any elemental component of the structure, (2) heating the structure to a background temperature just below the temperature required to achieve rapid thermal disordering of the well feature, (3) scanning the structure with a laser beam while maintaining the applied heat to selectively disorder the well feature due to the additional heat supplied by the laser beam forming a pattern of wider bandgap and lower refractive index properties prescribed in the feature by the scanning trace of the laser beam compared to areas of the feature not scanned by the laser beam. The well feature may be a quantum well structure comprising a single quantum well structure, a multiple quantum well structure or a separate confinement single quantum well or a separate confinement multiple quantum well or a heterostructure including an active region being the first layer.
公开日期	1987-03-31
申请日期	1985-09-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47595]
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	BURNHAM, ROBERT D.,JOHNSON, NOBLE M.. Selective disordering of well structures by laser annealing. US4654090. 1987-03-31.

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