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	Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
	SPAHN, OLGA B.; LEAR, KEVIN L.
	1998-03-10
著作权人	ENERGY, DEPARTMENT OF, UNITED STATES
专利号	US5726462
国家	美国
文献子类	授权发明
其他题名	Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
英文摘要	A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al2O3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 3-6 mu m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.
公开日期	1998-03-10
申请日期	1996-02-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47553]
专题	半导体激光器专利数据库
作者单位	ENERGY, DEPARTMENT OF, UNITED STATES
推荐引用方式 GB/T 7714	SPAHN, OLGA B.,LEAR, KEVIN L.. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer. US5726462. 1998-03-10.

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