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	Heterostructure junction lasers
	-
	1977-09-01
著作权人	WESTERN ELECTRIC CO INC
专利号	GB1484594A
国家	英国
文献子类	授权发明
其他题名	Heterostructure junction lasers
英文摘要	1484594 Lasers; semi-conductor junction devices WESTERN ELECTRIC CO Inc 22 Nov 1974 [23 Nov 1973] 50700/74 Headings H1C and H1K [Also in Division C4] A semi-conductor junction laser comprises a semi-conductor body including first and second heterojunctions 15, 19 defining an optical waveguide, and a third heterojunction 17 dividing the waveguide portion into two contiguous regions one of which-16-exhibits loss and the other-18-exhibits gain under lasing conditions, at least one of the heterojunctions being a P-N junction. Under lasing conditions the majority carrier concentration in the lossy region 16 is equal to or greater than the electron concentration in the gain region 18. The gain region is thicker than the lossy region and its thickness dg satisfies the inequality: where #n is the refractive index discontinuity at the third heterojunction, # is the full space wavelength of the laser radiation and ng is the refractive index of the gain region. In the example of Fig. 1 the various regions have the composition shown. Layer 22 may be dispensed with, depending on the difficulty of forming an electrical contact directly on layer 20. The structure is cleaved or polished optically flat along parallel surfaces 28, 30 to provide a resonator. An antireflection coating may be formed on surface 28 in order to produce an output beam through that surface. A stripe contact arrangement 40, formed, e.g. by proton bombardment, may be utilized to restrict the laser beam to a central zone 38 of the region 18. AlGaAs may be replaced by other Group III(a) and/or Group V(a) elements to form mixed crystals, e.g. AlGaAsP. To change the relative locations of the three heterojunctions and the relative locations within the three of the gain and loss regions the relative concentrations of the Ga, Al and As components within GaAlAs are altered, Figs. 2-4 (not shown).
公开日期	1977-09-01
申请日期	1974-11-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47536]
专题	半导体激光器专利数据库
作者单位	WESTERN ELECTRIC CO INC
推荐引用方式 GB/T 7714	-. Heterostructure junction lasers. GB1484594A. 1977-09-01.

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