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	Low temperature epitaxial growth of quaternary wide bandgap semiconductors
	KOUVETAKIS, JOHN; TSONG, IGNATIUS S. T.; ROUCKA, RADEK; TOLLE, JOHN
	2005-06-28
著作权人	ARIZONA BOARD OF REGENTS
专利号	US6911084
国家	美国
文献子类	授权发明
其他题名	Low temperature epitaxial growth of quaternary wide bandgap semiconductors
英文摘要	A method of growing quaternary epitaxial films having the formula YCZN wherein Y is a Group IV element and Z is a Group III element at temperatures in the range 550-750° C. is provided. In the method, a gaseous flux of precursor H3YCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (GSMBE) chamber where they combine to form thin film of YCZN on the substrate. Preferred substrates are silicon, silicon carbide and AlN/silicon structures. Epitaxial thin film SiCAlN and GeCAlN are provided. Bandgap engineering may be achieved by the method by adjusting reaction parameters of the GSMBE process and the relative concentrations of the constituents of the quaternary alloy films. Semiconductor devices produced by the present method have bandgaps from about 2 eV to about 6 eV and exhibit a spectral range from visible to ultraviolet which makes them useful for a variety of optoelectronic and microelectronic applications. Large-area substrates for growth of conventional Group III nitrides and compounds are produced by SiCAlN deposited on large-diameter silicon wafers. The quaternary compounds, especially the boron containing compounds, exhibit extreme hardness. These quaternary compounds are radiation resistant and may be used in space exploration.
公开日期	2005-06-28
申请日期	2001-10-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47521]
专题	半导体激光器专利数据库
作者单位	ARIZONA BOARD OF REGENTS
推荐引用方式 GB/T 7714	KOUVETAKIS, JOHN,TSONG, IGNATIUS S. T.,ROUCKA, RADEK,et al. Low temperature epitaxial growth of quaternary wide bandgap semiconductors. US6911084. 2005-06-28.

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