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	AlGaInP-based semiconductor laser
	HAGIMOTO, MASATO; FUKAI, HARUKI; KIYOSUMI, TSUTOMU; SASAKI, SHINJI; KAWANAKA, SATOSHI
	2016-08-23
著作权人	USHIO OPTO SEMICONDUCTORS, INC.
专利号	US9425583
国家	美国
文献子类	授权发明
其他题名	AlGaInP-based semiconductor laser
英文摘要	An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1−x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1−xn)0.5In0.5P (0.9
公开日期	2016-08-23
申请日期	2012-12-14
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47520]
专题	半导体激光器专利数据库
作者单位	USHIO OPTO SEMICONDUCTORS, INC.
推荐引用方式 GB/T 7714	HAGIMOTO, MASATO,FUKAI, HARUKI,KIYOSUMI, TSUTOMU,et al. AlGaInP-based semiconductor laser. US9425583. 2016-08-23.

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