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	Method for the hybrid integration of discrete elements on a semiconductor substrate
	KOVACIC, STEPHEN J.
	1998-08-11
著作权人	NORTEL NETWORKS UK LIMITED
专利号	US5793913
国家	美国
文献子类	授权发明
其他题名	Method for the hybrid integration of discrete elements on a semiconductor substrate
英文摘要	A method and apparatus is provided for locating with improved vertical positioning accuracy a discrete element on a semiconductor optoelectronic integrated circuit. The method employs an etch stop layer located beneath a series of semiconductor layers. The semiconductor layers may include waveguides to couple light between integrated or discrete elements. Pits with accurate depth are etched in the semiconductor layers down to the etch stop layer. Accurate alignment between a discrete element and another element is made possible by controlling their respective distances from the etch stop layer.
公开日期	1998-08-11
申请日期	1996-07-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47334]
专题	半导体激光器专利数据库
作者单位	NORTEL NETWORKS UK LIMITED
推荐引用方式 GB/T 7714	KOVACIC, STEPHEN J.. Method for the hybrid integration of discrete elements on a semiconductor substrate. US5793913. 1998-08-11.

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