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	Semiconductor laser including an aluminum-rich AlGaAs etch stopping layer
	SHIMA, AKIHIRO; MIURA, TAKESHI; KADOWAKI, TOMOKO; HAYAFUJI, NORIO
	1994-10-18
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US5357535
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser including an aluminum-rich AlGaAs etch stopping layer
英文摘要	In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, and active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.
公开日期	1994-10-18
申请日期	1993-01-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47244]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	SHIMA, AKIHIRO,MIURA, TAKESHI,KADOWAKI, TOMOKO,et al. Semiconductor laser including an aluminum-rich AlGaAs etch stopping layer. US5357535. 1994-10-18.

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