| Method for forming a coating film on a facet of a semiconductor laser diode | |
| FUKUDA, CHIE; ICHIKAWA, HIROYUKI | |
| 2009-09-29 | |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 专利号 | US7596162 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for forming a coating film on a facet of a semiconductor laser diode |
| 英文摘要 | The present invention is to provide a method for producing a semiconductor laser diode (LD) with an enhanced ESD resistance. The method includes a step for forming an aluminum film on a facet of the LD and a step for forming an aluminum oxide film on the aluminum film. The underlying aluminum film is oxidized during the formation of the aluminum oxide film to form a double aluminum oxide layer. The ratio of the oxide composition of the underlying aluminum oxide film is smaller than that of the upper aluminum oxide film. |
| 公开日期 | 2009-09-29 |
| 申请日期 | 2007-08-31 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46299]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | FUKUDA, CHIE,ICHIKAWA, HIROYUKI. Method for forming a coating film on a facet of a semiconductor laser diode. US7596162. 2009-09-29. |
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