QQ客服 官方微博 反馈留言

	Semiconductor lasers having single crystal mirror layers grown directly on facet
	MCELHINNEY, MARK; COLOMBO, PAUL
	2003-07-08
著作权人	ADC TELECOMMUNICATIONS, INC.
专利号	US6590920
国家	美国
文献子类	授权发明
其他题名	Semiconductor lasers having single crystal mirror layers grown directly on facet
英文摘要	A semiconductor laser with improved device characteristics and novel protection against high power output degradation is disclosed. The laser comprises a plurality of layers deposited on a substrate, including an active layer with neighboring cladding layers, so as to define a waveguide, said waveguide having opposing end surfaces. A single crystal mirror layer is formed directly on at least one of the end surfaces, providing improved device characteristics and a longer life time for high power output applications. The mirror layer has sufficient thickness and is made of a material having a refractive index sufficiently different from that of the active layer to substantially modify the reflectivity of the first end surface. In a preferred embodiment, the laser is an AlGaAs laser designed to operate at 980 nm, and the single crystal mirror layer comprises a large band gap material, such as ZnSe, MgS, or BeTe.
公开日期	2003-07-08
申请日期	1998-10-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46248]
专题	半导体激光器专利数据库
作者单位	ADC TELECOMMUNICATIONS, INC.
推荐引用方式 GB/T 7714	MCELHINNEY, MARK,COLOMBO, PAUL. Semiconductor lasers having single crystal mirror layers grown directly on facet. US6590920. 2003-07-08.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。