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	Stripe-geometry double heterojunction laser element
	YONEZU, HIROO; UENO, MASAYASU
	1981-08-04
著作权人	NIPPON ELECTRIC CO., LTD., 33-1, SHIBA GOCHOME, MINATO-KU, TOKYO, JAPAN
专利号	US4282494
国家	美国
文献子类	授权发明
其他题名	Stripe-geometry double heterojunction laser element
英文摘要	In a double heterojunction semiconductor laser, extremely high optical power density emission is achieved by forming a stripe-geometry exciting region in an active layer so as not to be exposed on the opposite reflective surfaces, and selecting a band gap of the stripe-geometry exciting region narrower than that of surrounding non-exciting region of the active layer. A pair of window regions formed between the respective reflective surfaces and the tip ends of the stripe-geometry exciting region are sandwiched between a pair of heterojunction interfaces and thus acting low loss optical waveguides. In addition, by providing an optical obstacle region in the vicinity of the window region, higher order modes in horizontal transverse mode oscillations are suppressed, and thereby extremely high optical power output at the fundamental mode can be obtained without causing catastrophic optical damage on the reflective surfaces.
公开日期	1981-08-04
申请日期	1979-02-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46247]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO., LTD., 33-1, SHIBA GOCHOME, MINATO-KU, TOKYO, JAPAN
推荐引用方式 GB/T 7714	YONEZU, HIROO,UENO, MASAYASU. Stripe-geometry double heterojunction laser element. US4282494. 1981-08-04.

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