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	Trap doped laser combined with photodetector
	COPELAND, III, JOHN A.
	1981-11-10
著作权人	BELL TELEPHONE LABORATORIES, INCORPORATED
专利号	US4300107
国家	美国
文献子类	授权发明
其他题名	Trap doped laser combined with photodetector
英文摘要	A semiconductor laser is disclosed wherein the active region has been doped with deep-level electron traps either by proton bombarding the active region or by doping with an impurity, such as oxygen, iron, or chromium. The density of traps is such that an optical absorption parameter of greater than 30 cm-1 is achieved. This laser, when combined with an ordinary photodiode, exhibits overall optical gain thereby permitting an array of optical logic circuits.
公开日期	1981-11-10
申请日期	1979-07-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46085]
专题	半导体激光器专利数据库
作者单位	BELL TELEPHONE LABORATORIES, INCORPORATED
推荐引用方式 GB/T 7714	COPELAND, III, JOHN A.. Trap doped laser combined with photodetector. US4300107. 1981-11-10.

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