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	Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
	SCHETZINA, JAN FREDERICK
	1997-10-21
著作权人	NORTH CAROLINA STATE UNIVERSITY
专利号	US5679965
国家	美国
文献子类	授权发明
其他题名	Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
英文摘要	An n-on-p integrated heterostructure device of Group III-V nitride compound semiconductor materials is formed on a substrate of p-type monocrystalline silicon carbide and includes a buffer layer of p-type aluminum nitride or p-type aluminum gallium nitride on the substrate. The n-on-p integrated heterostructure includes continuously graded layers of aluminum gallium nitride to reduce or eliminate conduction band or valence band offsets. A multiple quantum well may also be used instead of the continuously graded layer. The n-on-p integrated heterostructure device may include lasers, LEDs and other devices. A p-type negative electron affinity (NEA) photoelectron emitter device may also be provided, including a p-type monocrystalline silicon carbide substrate, a layer of p-type aluminum nitride or aluminum gallium nitride, a continuously graded layer of aluminum gallium nitride and a layer of p-type aluminum gallium nitride. A surface enhancement layer may be located on the layer of aluminum gallium nitride. A multiple quantum well may be used instead of the continuously graded layer of aluminum gallium nitride. An ultraviolet-sensitive NEA device may thereby be provided.
公开日期	1997-10-21
申请日期	1995-11-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45952]
专题	半导体激光器专利数据库
作者单位	NORTH CAROLINA STATE UNIVERSITY
推荐引用方式 GB/T 7714	SCHETZINA, JAN FREDERICK. Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same. US5679965. 1997-10-21.

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