| Compound semiconductor structures for optoelectronic devices | |
| ZHANG, YONG-HANG; DOWD, PHILIP; BRAUN, WOLFGANG | |
| 2003-05-20 | |
| 著作权人 | ARIZONA BOARD OF REGENTS |
| 专利号 | US6566688 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Compound semiconductor structures for optoelectronic devices |
| 英文摘要 | A compound semiconductor device is provided that includes a substrate and an active region disposed above the substrate. The active region includes at least two different pseudomorphic layers, the first layer having the form InxGa1-xPyAszSb1-y-z, and the second layer having the form InqGa1-qPrAssSb1-r-s. The first layer includes at least In, Ga, and As, and the second layer includes at least Ga, As, and Sb. It is preferable for the substrate to be GaAs or AlpGa1-pAs (0 |
| 公开日期 | 2003-05-20 |
| 申请日期 | 2001-05-24 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45940]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ARIZONA BOARD OF REGENTS |
| 推荐引用方式 GB/T 7714 | ZHANG, YONG-HANG,DOWD, PHILIP,BRAUN, WOLFGANG. Compound semiconductor structures for optoelectronic devices. US6566688. 2003-05-20. |
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